^e.mi-conclu.cto'i zpioducti, una. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2n339 0 2n339 1 2n3391 a 2n339 2 2n339 3 to-9 2 np n genera l purpos e amplifie r thi s devic e i s designe d fo r us e a s genera l purpos e amplifier s an d switche s requirin g collecto r current s t o 30 0 ma . source d fro m proces s 10 . f absolut e maximu m ratings * t a = 25 c unles s otherwis e note d symbo l vce o vcb o veb o k tj , t s ta paramete r collector-emitte r voltag e collector-bas e voltag e emitter-bas e voltag e collecto r curren t - continuou s operatin g an d storag e junctio n temperatur e rang e valu e 2 5 2 5 5. 0 50 0 -5 5 t o +15 0 unit s v v v m a o thes e rating s ar e limitin g value s abov e whic h th e serviceabilit y o f an y semiconducto r devic e ma y b e impaired . 1 ) thes e rating s ar e base d o n a maximu m junctio n temperatur e o f 15 0 degree s c . 2 ) thes e ar e stead y stat e limits . th e factor y shoul d b e consulte d o n application s involvin g pulse d o r lo w dut y cycl e operations . t a = 25 c unles s otherwis e note d symbo l p d rej c rw a characteristi c tota l devic e dissipatio n derat e abov e 25 c therma l resistance , junctio n t o cas e therma l resistance , junctio n t o ambien t ma x 2n339 0 / 3391/ a / 339 2 / 339 3 62 5 5. 0 83. 3 20 0 unit s m w mw/ c c/ w c/ w n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n furnishe d by nj semi-conductor s is believe d to be both accurat e and reliable at the tim e of goin g to press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . downloaded from: http:///
electrica l characteristic s ta=25 c unles s otherwis e n o symbo l paramete r tes t condition s mi n ma x unit s of f characteristic s v(br)ce o v(br)cb o v(br)eb o icb o ieb o collector-emitte r breakdow n voltage * collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-cutof f curren t emitter-cutof f curren t l c = 10ma , i b = 0 l c = 10na, i e = 0 ! e = 10na , l c = 0 v cb =18v , i e = 0 ve b = 5. 0 v , i c = 0 2 5 2 5 5. 0 10 0 10 0 v vv n a n a o n characteristics * hf e d c curren t gai n v c e = 4. 5 v , i c = 2. 0 m a 2n339 0 2n3391/ a 2n339 2 2n339 3 40 0 25 0 15 0 9 0 80 0 50 0 30 0 18 0 smal l signa l characteristic s co b hf e n f outpu t capacitanc e small-signa l curren t gai n nois e figur e v c b = 10v , f = 1.0mh z i c = 2. 0 ma , vc e = 4. 5 v , f = 1 . 0 kh z 2n339 0 2n3391/ a 2n339 2 2n339 3 vc e = 4.5v , lc=100na , r g = 500jj , 2N3391Aonl y b w = 15. 7 kh z 2. 0 40 0 25 0 15 0 9 0 1 0 125 0 80 0 50 0 40 0 5. 0 p f d b puls e test : puls e widt h 30 0 jis . dut y cycl e s 2.0 % downloaded from: http:///
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